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Weigh Right's G50E entry level Direct Fill Scale We also offer a fully automated G50 with power roller conveyorD limit to 2800 mA, I G limit to 50 mA 2 Set V G to −15 V 3 Set V D 6 V 4 Adjust V G more positive until I DQ = 1430 mA (V G ~ −04 V to 08 V typical range) 5 Apply RF signal Applications Circuit Note A 50 Ω Microstrip Transmission Line Bias Down Procedure 1 Turn off RF signal 2 Reduce V G to −15 V Ensure I DQ ~ 0 mA 3 Set=50 Ω 2 In transmissionline equivalentcircuit model, G ≠ 1/ R Eg The following characteristics have been measured on a lossy transmission line at 100 MHz Z 0 =50 Ω, α =001 dB / m =115×103 Np / m, β =08 π (rad / m) Determine R, L, G, and C for the line (Sol) G j C R j L 8 8 2 10 2 10 50 , 115×103 j 0

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50 10 10 VCE = 40 V TJ = 25°C 50 50 5010 PNP NPN 1000 10 FORWARD BIAS There are two limitations on the power handling ability of a transistor average junction temperature and second breakdown Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliableD, D R e v e r s e S D r a i n C u r r e n t (A) TJ = 25°C TJ = 175°C VGS = 0V 1 10 100 1000 VDS , DraintoSource Voltage (V) 1 10 100 1000 I D, Tc = 25°C r a i nt oo u r c e Tj = 175°C Single Pulse 1msec 10msec OPERATION IN THIS AREA LIMITED BY RDS(on) 100µsec 0 40 80 1 160 0 2 4 6 8 10 12 Q , Total Gate Charge (nC) V , GatetoG A V G V I G A T VJ = 25°C t gd µs I GD I GT (T VJ =40°C) I GT (T VJ = 0°C) I GT (T VJ = 25°C) 1 2 5 ° C 2 5 ° C t p = 30 µs t p = 500 µs P GM = 1 W 60 W P GAV = 8 W limit typ Symbol Conditions Characteristic Values typ max I RRM, I DRM V R / V D = V RRM / V DRM T VJ = T VJM 5 mA V T, V F I T / I F = 300 A T VJ = 25°C 1

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G I AS tp 001 Ω DUT L V DS V DD 10 V Vary t p to obtain required I AS I AS V DS V DD V DS t p 25 75 100 125 10 0 0 400 600 800 1000 Starting T J, Junction Temperature (°C) E AS, Single Pulse Energy (mJ) Bottom Top I D 49 A 85 A 12 A V DD = 25 V _12c 175 Q GS Q GD Q G V G Charge 10 V DUT 3 mA V GS V DS IG I D 03 µF 02 µF 50 kΩ 12 V Current regulator Current sampling resistors Same type as DUT SiHFPS37N50A wwwvishaycom Vishay Siliconix SRev D, 18Jan21 7 Document Number For technical questions, contact hvm@vishaycom THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT128 143 150 156 — — — — G i r a d A v L a J o a B l i s s i o n B l M i o B l I n g r a h m vt L a m o n tS E 11 M i sion B a y Dr Mo r e n B l L i n d V i s t a

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50 25 0 25 50 75 100 125 150 V GS = 45V I D = 6A V GS = 10V I D = 10A R, 100 D R A I NS O U R C E O NR E S I S T A N C E D S (O N) T J, JUNCTION TEMPERATURE (qC) Figure 7 OnResistance Variation with Temperature 08 1 12 14 16 18 2 2250 25 0 25 50 75 100 125 150 I D = 1mA I D = 250µA V, G A E T H R E S H O L D V O L T A G E (V) GD V DS, DRAINSOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 06 08 1 12 1 0 25 50 75 100 125 150 I D = 1mA I D = 250µA V, G A T E T H R E S H L D V O L T A G E () V) G S(t H) h T , AMBIENT TEMPERATURE ( C) A Figure 8 Gate Threshold Variation vs Ambient Temperature V VRG IAS tp 001 DUT L VDS V DD 10 V Vary tp to obtain required IAS IAS VDS VDD VDS tp 600 0 100 0 300 400 500 25 75 100 125 Starting T J, Junction Temperature (°C) E AS, Single Pulse Energy (mJ) Bottom Top ID 11 A A 28 A VDD = 25 V _12c 175 QGS QGD QG VG Charge 10 V DUT 3 mA VGS VDS IG ID 03 µF 02 µF 50 k 12 V Current

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Set 50 mA current limit to V G Set 8 A current limit to V D Biasdown ProcedureBias 11 Turn off RF supply 2 Reduce V G to 50 V Ensure I DQ ~ 0 mA 3 Set V D 3 to 0 V 4 Set V G to 0 V up Procedure Apply 50 V to V G 2Apply 24 V to V D Adjust V G until I DQ = 2400 mA (V ~ 26 V Typ) 4Turn on RF supply TG312FL Xband 60W50th Operations Group The 50th Operations Group was a component of the 50th Space Wing, assigned to the United States Space Operation Command from 1991 to The group is stationed at Schriever Air Force Base, Colorado The group was activated in January 1941 as the 50th Pursuit Group and began training under Third Air Force

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